摘要：薄膜沉積時(shí)，原子的入射角度、襯底材質(zhì)等嚴(yán)重影響著薄膜的結(jié)構(gòu)與性能特征，為此本文采用磁控濺射系統(tǒng)，通過改變?nèi)肷浣嵌葘Σ煌r底上銅原子的沉積進(jìn)行了研究。然后利用金相顯微鏡、掃描電子顯微鏡（SEM）、臺階儀等分析了銅沉積物的結(jié)構(gòu)和形貌。最后對不同入射角度下銅原子在襯底上的沉積機(jī)理進(jìn)行了分析。研究結(jié)果表明：（1）在玻璃襯底上，當(dāng)入射角度θ=27°時(shí)，成功制備了一種銅納米線/銅膜復(fù)合結(jié)構(gòu)，而其它角度和襯底均不利于復(fù)合結(jié)構(gòu)的形成；（2）在銅納米線/銅膜復(fù)合結(jié)構(gòu)中，銅納米線取向一致、平行于襯底鑲嵌在金屬銅膜表面；（3）銅納米線/銅膜復(fù)合結(jié)構(gòu)的形成機(jī)理是定向壓應(yīng)力效應(yīng)；（4）我們提出了一種新的“層-線狀“生長模式。

關(guān)鍵詞：銅；小入射角沉積；銅納米線/銅膜復(fù)合結(jié)構(gòu)；層-線狀生長

Abstract:During growth of films, the incident angle of atoms and the substrate influence greatly the structure and property of films. Thus in this paper the deposition behavior of copper atoms was investigated by changing the incident angle and the substrate in a magnetron sputtering system. The morphologies of as-deposited copper films were then characterized by metalloscope and scanning electron microscope. With analysis of the morphological features of copper films, the deposition mechanisms of copper atoms with different incident angles on different substrates were further studied. The detailed work and outstanding contributions are concentrated as in the following:

　　(1) Copper nanowires/film composite structures were successfully fabricated at the incident angle of 27° on glass substrate, while at other incident angles or on other substrates no such composite structure formed.

    (2) In the copper nanowires/film composite structures, copper nanowires with a unique orientation were parallel to the substrate and inlaid into the surface of a supporting copper film.

    (3) The formation mechanism of copper nanowires/film composite structures was directed compressive stress effect.

    (4) A completely new growth mode of layer-plus-wire growth was proposed in this paper.

Key words: copper; small incident angle deposition; copper nanowires/film composite structure; layer-plus-wire growth