摘要：氧化銦(In2O3)是一種寬禁帶的N型半導(dǎo)體材料，其室溫下直接禁帶寬度約為3.65eV，在可見光范圍的透明度超過90％，并且單晶氧化銦有著很高的遷移率(160 cm2/V·s)，這使得氧化銦成為制備透明電子器件的重要候選材料之一。

　　　本文通過實(shí)驗(yàn)制備了氧化銦薄膜，并對其物理性能進(jìn)行了研究。實(shí)驗(yàn)主要使用磁控濺射的方法制備了銦膜，然后對樣品進(jìn)行熱退火形成氧化銦薄膜，分析不同的工藝條件、退火溫度、退火時間、薄膜厚度等因素對薄膜光電性能的影響。我們使用DEKTAK150臺階儀測試薄膜的厚度，利用四探針測試儀測試薄膜的電阻率，導(dǎo)電類型鑒定儀分析薄膜的導(dǎo)電類型，利用X射線衍射儀（XRD）研究薄膜的結(jié)構(gòu)性能，運(yùn)用紫外-可見光分光計分析其光學(xué)性能。X射線衍射結(jié)果表明制得的氧化銦薄膜均為立方結(jié)構(gòu)的多晶體。光譜分析表明退火時間及退火溫度對薄膜透射率的影響較大，氧化銦薄膜的透射率在可見光范圍內(nèi)在80%以上，其禁帶寬度為3.61~3.63eV。比較各種退火條件下制備出的樣品，得出薄膜在退火時間為25min，退火溫度在430℃時制備得到的薄膜性能較好。

關(guān)鍵詞：氧化銦，磁控濺射，光電性能，X射線衍射

Abstract:Indium oxide is a direct,wide band gap and N—type semiconductor with good optical and electronic properties.Its band gap is 3.65eV at room temperature,the transmittance of visible light is very high(>90％)as well as the high mobility(~160cm2/V·s of single-crystal),making it an important alternative to fabricate transparent electronic devices.

　　　In this paper,we prepared the indium oxide thin film by experiment, then studied the physical properties.Experiment were prepared using magnetron sputtering of indium film,and then annealed the samples to the formation of indium oxide films.We analyzed of different process conditions, annealing temperature, annealing time,film thickness and other factors affect on the optical and electrical properties of indium oxide films.We used DEKTAK150 Surface Profiler to test the film’s thickness, utilized four probe tester measuring the film’s resistivity, used X-ray diffraction (XRD) to study the microscopic structure,UV-visible spectrometer analysis were used to analyze the film’s optical properties.The X-ray diffraction(XRD) analysis shows that the films are polycrystalline and retain a cubic structure.Spectrum analysis shows that the annealing time and annealing temperature have great influence on the transmittance of the films.The transmittance of visible light of the indium oxide films reaches 80%,and its band pap is from 3.61eV to 3.63eV at room temperature.Compared these samples prepared under different annealing conditions, the annealed condition 25min,430℃ can get the better performance of the films.

Keywords: indium oxide;magnetron sputtering;Optical and electrical characteristics;X-ray diffraction