摘要：實驗用射頻磁控濺射制備銦硅氧化復合薄膜，分別用分層、共濺方法沉積在載玻片或Si襯底上，然后在不同的溫度下退火處理,并分析了薄膜厚度、退火條件對薄膜光學、電學性質的影響。實驗使用臺階儀測試薄膜的厚度，四探針測試儀測試薄膜的電阻率，P-N型導電類型鑒別儀分析薄膜的導電類型，X射線衍射儀（XRD）對薄膜進行結構分析，運用紫外-可見光分光計分析其光學性能，實驗結果表明，不同退火溫度能夠改變晶體的結晶以及取向生長。我們發現在不同的溫度下都存在晶向為（-201）的In2Si2O7衍射峰，其峰值強度相比較In2O3和SiO2不是很明顯。退火并沒有改變薄膜的電阻和電阻率。600°C退火條件下，薄膜的光學性質最佳，銦硅薄膜禁帶寬度Eg大約在3.00eV-3.40eV之間，光譜分析表明薄膜具有平均90%以上高可見光透射率。退火前后薄膜均不導電，電阻無窮大。

關鍵詞:  銦硅氧化復合薄膜；退火溫度；XRD衍射；光學性質；電學性質

Abstract:Experiments were prepared by magnetron sputtering and indium silicon composite film were formed respectively by altogether and layered sputtering in these two way on the glass or Si substrate. Then annealed these films at different temperatures. We analyzed how the different film thickness annealing temperatures effects the optical and electrical properties. Experiments used Surface Profiler to test the films’ thickness, utilized four probe tester measuring the film’s resistivity, PN-type conductivity type detectors to analisis films’ conductivity type , used X-ray diffraction (XRD) to study the microscopic structure and UV-visible spectrometer analysis were used to analyze films’ optical properties. The results show that appropriate different annealing temperatures can change the crystallization state, At these annealing temperature, we find the crystal orientation (-2 0 1) of the In2Si2O7 diffraction peaks , but the diffraction peak intensity is not too obvious, respectively In2O3 and SiO2. Annealing has no effect on films’ resistance and resistivity .The study of film’s optical properties shows that the band gap (Eg) of indium silicon composite film is between in 3.00-3.40eV.The spectrums show that the films have high transmittance in visible light, more than an average of 90%. Before and after annealing, the films is not conductive, their resistance is infinite.

Keywords: indium silicon composite film; Anneal temperatures; X-ray diffraction; optical properties; electrical properties;