摘要：ZnO是一種新型的II一Ⅵ族直接寬帶隙化合物半導體材料。室溫下禁帶寬度為3．37eV，激子束縛能為60meV，具備了室溫下發(fā)射紫外光的必要條件，在紫外探測器、LED、LD等領域有著巨大的發(fā)展?jié)摿Γ籞nO薄膜以其優(yōu)良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。

　　　本文采用溶膠一凝膠(sol-gel)工藝在普通玻璃基片上成功地制備出純ZnO薄膜和A1摻雜的ZnO薄膜（AZO薄膜），同時用磁控濺射法制備了AZO薄膜以及AZO/Ag/AZO薄膜。所用的溶膠是以乙二醇甲醚為溶劑，醋酸鋅為前驅體，乙醇胺為穩(wěn)定劑反應制得，用旋轉涂膜法在基體上鍍膜，經(jīng)烘烤、預燒、退火，最后形成均勻、透明的多晶薄膜。利用XRD、UVS光譜儀等分析方法對薄膜進行了研究，結果顯示，用溶膠-凝膠法制備的薄膜為六方纖鋅礦型結構，具有高C軸擇優(yōu)取向性；表面均勻、致密，薄膜材料由許多星狀晶粒組成，薄膜在可見光透過率平均可達85％；對薄膜厚度以及電學性能進行了測定后發(fā)現(xiàn)：薄膜厚度平均為100nm，摻雜1%Al的AZO薄膜在550℃退火溫度下得到了最小電阻率，為4Ω.cm。

　　　用磁控濺射法制備的AZO薄膜以及AZO/Ag/AZO薄膜均具有C軸擇優(yōu)取向，其中AZO薄膜在可見光范圍內(nèi)的透過率平均可達90%，而AZO/Ag/AZO三明治結構的薄膜的透過率遠低于80%，AZO薄膜表面電阻在2.0X104～3.0X104Ω，AZO/Ag/AZO薄膜表面電阻在20～50Ω。

關鍵詞：溶膠-凝膠法；Al摻雜；磁控濺射法、AZO/Ag/AZO

Abstract:Zn0 film is a novel Ⅱ一Ⅵdirect compound semiconductor with wide band gap energy of 3.37eV and a exciton binding energe 60meV at room temperature. Due to its the prerequisite for visible or ultraviolet light emission at room temperanlre, it has the tremendous potential applications for ultraviolet detectors, LEDs, LDs. ZnO thin fnm is used widely and efrectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance. 

   In this paper, the pure Zn0 and Al-doped ZnO thin films(AZO) were prepared on ordinary glass substrate ( micmscope slides) by sol-gel process, and AZO films and AZO/Ag/AZO films were prepared by Magnetron sputtering. Using 2-methoxyethanol as solution, Zinc acetate as premonitor, monoethanolamine as stabilizator and aluminum chloride reaction, these sols were prepared. Homogenous, transparent, polycrystalline thin films were formed by spin-coating method for film-plate on substrate, drying, pre-heat-treatment, and last anealing. By the measurements of XRD and UVS, the properties of these thin films were analysed. The results proved that the thin film by sol-gel meature with strongly preferred orientation of C-axis perpendicular, the surface was homogenous，dense and crackfree was the crystalline phase of hexagonal wurtizite．The average transmittance of thin film in visible region was 85%. The average thickness of the film was 100nm. Doping with 1% Al and annealing at 550 ° C, the minimum resistivity of these AZO thin films were gained, which was 4Ω.cm.

  Prepared by Magnetron sputtering the AZO thin film and the AZO/Ag/AZO thin film all have C-axis perpendicular.The average transmittance of the AZO thin film in visible region was 90%, and the transmittance of the AZO/Ag/AZO thin film was lower 80%. the resistance of the AZO thin film was at 2.0X104～3.0X104Ω, the resistance of the AZO/Ag/AZO thin film was at 20～50Ω.

Key words: sol-gel process; Al doping; Magnetron sputtering; AZO/Ag/AZO.