摘  要：一維納米材料具有新穎的物理、化學和生物特性以及在納電子器件中的潛在應用，日益成為當今納米研究領域中的熱點。利用它不僅可以深入地理解低維材料的基本現象，更重要的是它可以作為功能模塊來構筑納米電子器件。在眾多的半導體材料中，SiC半導體材料的禁帶寬度大、擊穿電場高、熱導率大、飽和漂移速度高等特點使其在高頻、高溫、高功率、抗輻射等方面有良好的性能，被認為是新一代微電子器件和集成電路的半導體材料，因此研究SiC一維納米半導體材料具有重要意義。目前國內外對SiC納米線的研究還處于初步階段，主要集中在兩個方面:用不同的方法制備SiC納米線;對SiC納米線性能進行簡單的表征，如光學，場發射等。但是目前制備SiC納米線方法中主要存在以下缺點:產物量少，有金屬催化劑顆粒的污染，成本高，合成時間長，制備當中有如SiH4、CH4等之類的劇毒易燃易爆危險氣體潛在危險。因此，簡單、批量和成本低廉制備SiC納米線的方法對于其能否走向大規模應用具有重要的意義。

　　　用多孔硅作為硅源可以大量合成碳化硅納米線。對實驗生成的碳化硅納米線，用X射線衍射儀，場發射掃描電子顯微鏡，透射電子顯微鏡來進行分析表征。“液-固”相機理在SiC納米線的合成中起了關鍵作用。用發光光譜測量實驗中的SiC納米線。對于SiC納米線在室溫左右的發光光譜，364nm處的紫外輻射可能是由于過剩氧缺陷的輻射復合造成的。

關鍵詞：納米線，β-SiC,化學氣相沉積，光致發光

Abstract：One-dimensional(1D) nanostructures have become the focus of intensive research owing to their novel physical,chemical,and biological properties as well as the potential applications in nanodevices.It was of not only their importance in understanding fundmental physical phenomenon,e.g.electron transportation,but also the promising applications such as interconnests and functional building blocks for novel electrical,optical and magnetic nanodevices.Moreover,large-scale,cost-effective,simple and practical synthesis and assembly of 1D nanomaterials is of importance for the fundamental research and application.Among the semiconductor materials which are suitable for high frequency,high temperature,high power and radio-resistance applications,ailicon carbide(SiC) holds the most promising because of its wide energy bandgap,high breakout field,high thermal conductivity and high drift velocity.The combination of these properties shows promise for next generation microelectronic devices and Ics fabricated in SiC.The study of SiC material is of great importance to future nanoscale electronic devices as well as fundamental research.At present ,the research on SiC nanowire is just in a tentative stage, and has been focused on two aspects:a simple and easy preparation of SiC nanowires,and the testing of SiC nanowires properties of optical,filed emission and so on.However,these products are available at the cost of either high-purity or expensive CNT or the hazardous and easily explosive silicon (carbon) precursor of SiH4 or CH4.In addition ,the synthesized materials were low yield and purity and time-consuming.Thus,large-scale synthesis of β-SiC nanowires still remain a challenge to be consider for above mentioned disadvantage.Hence,the simple,large quantity  and low cost synthesis of SiC nanowires would be importance to future large-scale manufacturing application. 

　　　SiC nanowires (NWs) have been synthesized in high yield  using porous silicon  as Si element source.Detailed characterizations on  the resulting SiC NWs  are carried out using X-ray powder diffraction,field-emission scanning electron  microscopy,transmission electron microscopy.The Vapor-solid  mechanism plays a main role in the growth of  the as-prepared SiC NWs .Photoluminescence(PL)  spectroscopy  has been measured on  the resultant SiC NWs.As for the room-temperature  PL of SiC NWs,ultraviolet emission at 364 nm might be ascribed to the radiative recombination from excess oxygen defects.

KEY WORDS:Nanowire, β-SiC,CVD, Photoluminescence