摘要:本文采用溶膠凝膠旋轉涂膜法，以二水合醋酸鋅、乙醇胺、乙二醇甲醚為主要原料，九水硝酸鋁為摻雜劑，在玻璃襯底上生長AZO薄膜。運用X射線衍射、紫外可見光透射譜、電學平臺等測試手段對薄膜表面形貌、光學性能和電學性能進行了表征。研究了退火溫度對薄膜表面形貌、光學性能和電學性能的影響以及H2等離子體處理對薄膜的電學性能的影響。

　　　結果表明：實驗最佳工藝參數是溶膠濃度為0.5mol/L，Al摻雜濃度為1%，預處理溫度300℃，鍍膜層數5層，退火溫度550℃，表面電阻為0.4M。制備的AZO薄膜為六方纖鋅礦結構，具有明顯的c軸擇優取向，晶粒尺寸在9~20nm之間，薄膜厚度100nm左右，薄膜平均光透過率超過85%。退火溫度越高，越多的Al3+占據Zn2+的位置，薄膜的平均透過率越高，但是截止波長基本相同，禁帶寬度逐漸減小。H2等離子體處理能夠改善薄膜的電學性能，在經過H2等離子體處理之前，薄膜具有最低的電阻為1.54×107Ω；在經過H2等離子體處理之后，薄膜具有最低的電阻為9.18×103Ω。樣品的電阻值的變化跟存放環境有很大的關系。經過等離子體處理的樣品的電阻值，經過96小時后，烘箱中的樣品的電阻值最大，可能是因為H原子的解吸附引起的。

關鍵詞：退火；AZO薄膜；溶膠凝膠法；性能

Abstract：In this paper，AZO thin films were prepared by sol-gel spin-coating technique on glass substrates，Zn(CH3COO)2·2H2O，H2NCH2CH2OH and CH3OCH2CH2OH were main raw materials，Al(NO3)3·9H2O was the doping agent. The surface topography，optical and electrical properties the AZO thin films were investigated by X-ray diffractometer(XRD)，UV-visible transmission spectra，electrical platform. The effect of annealing temperature on the surface topography，optical and electrical properties，and the effect of H2 plasma treatment on electrical properties were researched by many groups experiment.

　　　The results appeared the optimum technology parameters is sol concentration of 0.5mol/L，Al doping concentration is 1%，and the pretreatment temperature of 300 ℃，coating layer and layer，annealing temperature of 550 ℃，surface resistance of 0.4MΩ. Both the as-deposited and H2 plasma treated AZO films had a hexagonal wurtzite structure. The films showed high preferential c-axis orientation. The films’ grain size was between from 9 to 20 nm，its thickness was about 100nm，and its average optical transmittance of the film is more than 85% in the visible region. The annealing temperature increased，the optical transmittance of thin films also increased，and more Al3+ replaced Zn2+，forbidden band width decreased gradually. H2 plasma treatment can improve the film electrical properties. Before H2 plasma treatment，the film has the lowest resistance for 1.54×107Ω；The change of the resistance with storage environment has the very big relations. After 96 hours，the resistance of the sample is maximum that stored in the dryer after plasma treatment， the reason is the desorption of H atoms，

Key words：Annealing treatment；AZO thin films；Sol-gel technique；Properties